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The Role of Defects on the Performance of Quantum Dot Intermediate Band Solar Cells

Collazos, Lida Janeth; Al Huwayz, Maryam M.; Jakomin, Roberto; Micha, Daniel N.; Pinto, Luciania Dornelas; Kawabata, Rudy M. S.; Pires, Mauricio P.; Henini, Mohamed; Souza, Patricia L.

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Authors

Lida Janeth Collazos

Maryam M. Al Huwayz

Roberto Jakomin

Daniel N. Micha

Luciania Dornelas Pinto

Rudy M. S. Kawabata

Mauricio P. Pires

Patricia L. Souza



Abstract

Electrically active defects present in three InAs/GaAs quantum dots (QDs) intermediate band solar cells grown by metalorganic vapor phase epitaxy have been investigated. The devices’ structures are almost identical, differing only in the growth temperature and thickness of the GaAs layers that cover each InAs QD layer. These differences induce significant changes in the solar energy conversion efficiency of the photovoltaic cells, as previously reported. In this work, a systematic investigation was carried out using deep level transient spectroscopy (DLTS) and Laplace DLTS measurements on control samples and solar cell devices, which have clearly shown that electrically active traps play an important role in the device figures of merit, such as open circuit voltage, short circuit current, and shunt resistance. In particular, it was found that the well-known EL2 defect negatively affects both the open circuit voltage and shunt resistance, more in structures containing QDs, as a consequence of the temperature cycle required to deposit them. Other unidentified defects, that are absent in samples in which the QDs were annealed at 700 °C, contribute to a reduction of the short circuit current, as they increase the Shockley-Read-Hall recombination. Photoluminescence results further support the DLTS-based assignments.

Citation

Collazos, L. J., Al Huwayz, M. M., Jakomin, R., Micha, D. N., Pinto, L. D., Kawabata, R. M. S., …Souza, P. L. (2021). The Role of Defects on the Performance of Quantum Dot Intermediate Band Solar Cells. IEEE Journal of Photovoltaics, 11(4), 1022-1031. https://doi.org/10.1109/jphotov.2021.3070433

Journal Article Type Article
Acceptance Date Mar 25, 2021
Online Publication Date May 12, 2021
Publication Date Jul 1, 2021
Deposit Date May 27, 2021
Publicly Available Date Jun 2, 2021
Journal IEEE Journal of Photovoltaics
Print ISSN 2156-3381
Electronic ISSN 2156-3403
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 11
Issue 4
Pages 1022-1031
DOI https://doi.org/10.1109/jphotov.2021.3070433
Keywords Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Condensed Matter Physics
Public URL https://nottingham-repository.worktribe.com/output/5575004
Publisher URL https://ieeexplore.ieee.org/document/9429869
Additional Information © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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